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US20140265013A1 - Methods for creating large-area complex nanopatterns for nanoimprint molds - Google Patents

Methods for creating large-area complex nanopatterns for nanoimprint molds Download PDF

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US20140265013A1
US20140265013A1 US14/217,052 US201414217052A US2014265013A1 US 20140265013 A1 US20140265013 A1 US 20140265013A1 US 201414217052 A US201414217052 A US 201414217052A US 2014265013 A1 US2014265013 A1 US 2014265013A1
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mold
nanoimprint
complex
area
nanostructures
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Stephen Y. Chou
Fei Ding
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Princeton University
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Princeton University
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Priority to US14/775,635 priority patent/US20160025634A1/en
Assigned to THE TRUSTEES OF PRINCETON UNIVERSITY reassignment THE TRUSTEES OF PRINCETON UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOU, STEPHEN Y., DING, FEI
Publication of US20140265013A1 publication Critical patent/US20140265013A1/en
Priority to US16/038,963 priority patent/US20190079013A1/en
Priority to US17/394,223 priority patent/US20220205920A1/en
Priority to US18/523,814 priority patent/US20240344993A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C37/00—Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
    • B29C37/0003—Discharging moulded articles from the mould
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/026—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing of layered or coated substantially flat surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/648—Specially adapted constructive features of fluorimeters using evanescent coupling or surface plasmon coupling for the excitation of fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6486—Measuring fluorescence of biological material, e.g. DNA, RNA, cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B29C2059/023—Microembossing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
    • B29C33/424—Moulding surfaces provided with means for marking or patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0003—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
    • B29K2995/0005—Conductive

Definitions

  • the current invention is related to the methods that can over this problem.
  • the methods invented can create large area complex patterns for nanoimprint molds without or with very litter of the use of the charged beam or photon beam direct-writing of nanostructures
  • the invention is related to creating large area complex patterns for nanoimprint molds.
  • FIG. 1 Multi-set nanopatterning (MSN)based on multiple processing by different nanoimprint molds to form the final mold.
  • MSN Multi-set nanopatterning
  • Example-1 is a large area 100 nm nanodot array formed by fabrication using a large area nano-grating mold.
  • Example-2 shows that MSN can use a large-area nano-grating mold to create large-area nano-dots, which then to the nano-rings, which then the split nano-rings.
  • FIG. 2 One embodiment of Multi-set nanopatterning (MSN) is to “convert” microstructures on a large area mold to “nanostructures” and to add new microstructures.
  • MSN Multi-set nanopatterning
  • FIG. 3 Multi-set nanopatterning (MSN), a new innovative path-changing approach, offers a viable solution to a central challenge in nanomanufacturing (including nanoimprint): generation of complex nanostructures over large-area (>1 meters) without using electron beam lithography or the like.
  • MSN Multi-set nanopatterning
  • FIG. 4 Shows some of the principles of interference lithography.
  • FIG. 5 Schematic of generation of nanopatterns with varying shape, spacing and density by FNP.
  • FIG. 6 Nanodots array with varying shape, spacing and density by FNP.
  • the rotation angle is 85 degree. Note the gaps as small as 2 nm are produced.
  • FIG. 7 Nanodots array with varying shape, spacing and density by FNP.
  • the rotation angle is 30 degree, which produces a period short than 85 degree. Again 2 nm gaps are produced.
  • FIG. 8 SEM of ring array with 200 nm pitch, 40 nm and 140 inner and outer diameter, respectively. Fabricated by FNP and EGN.
  • FIG. 9 Fabrication process of nanoimprint mold for split-ring devices: (a) SiO2 pillars fabricated by interference lithography and nanoimprint; (b) conformal SiNx growth over the pillars fabricated in (a); (c) etching down SiNx by reactive ion etching to expose the SiO2 pillar; (d) oblique evaporation of Cr using the SiO2 pillar as shadow mask; (e) etching into shadowed SiNx to make a cut on the SiNx ring; (f) removal of SiO2 pillar by HF.
  • FIG. 10 SEM pictures of the split-ring fabrication.
  • FIG. 11 SEM of single split ring mold by FNP.
  • the methods invented that can create large area complex patterns for nanoimprint molds without or with very litter of the use of the charged beam or photon beam direct-writing of nanostructures, comprise several basic methods and different of combination of basic methods, that lead to the final desire complex over large area.
  • the technology is termed Multi-set nanopatterning (MSN) and also termed “compositional imprint lithography” (CIL).
  • MSN Multi-set nanopatterning
  • CIL compositional imprint lithography
  • the basic method B is to have pattern of either micron or nanosize, by shadow evaporation patterns can formed at the edges of these patterns, and its lateral dimension is determined by the film thickness, in this way micro patterns become nanoscale patterns.
  • the MSN is based on the two principles: (a) the large-area nanoimprint mold with the desired nanostructures can be composed (fabricated) by using several primary molds with each of them having only a part of the structures on the final mold, and (b) the nanostructures on a primary mold can be made by “converting” a microstructure to a nanostructure, or “converting” large-area simple nanostructures (e.g. by interference lithography) into large area complicated structures using conventional micro fabrication methods. Each of two processes can be used intermixed and multiple times to build very complicated nanostructures over large area. Once a large area master mold is made, it can be duplicated to multiple copies for mass production.
  • FIG. 2 illustrates that a nanogate/nanowire can be fabricated by using edge patterning (film deposition or shadow evaporation) of microstructure.
  • the Example-1 in FIG. 1 shows that a large area 100 nm dots can be formed by two cycles of nanoimprint and etching using a large area grating mold (the second imprint rotates the mold by 90 degree).
  • the Example-2 shows the SEMs (demonstration) that MSN can use a large-area nano-grating mold to form large-area nano-dots, which then to form the nano-rings, which then the split nano-rings, and which then split-nano-ring.
  • the ring is formed by oxidizing a pillar or by conformal thin film deposition of pillar (and etch away the unwanted parts).
  • the (single or double) split of the ring is formed by shadow evaporation. All these fabrication steps (except nanoimprint) use only the conventional microfabrication processes.
  • One central issue in nanomanufacturing is to generate complex nanopatterns over large area with high-throughput and low cost, particularly for the feature size less than 100 nm and pattern pitch less than 200 nm (i.e. below 100 nm node in semiconductor ICs) in an area larger than 100 cm2 (or even to wall pager size). Advance in this area will have significant impact to a wide range of industrial applications, well beyond semiconductor ICs, such as new materials, solar cells, solid state lighting, fuel cells, data storage, optical communication, displays, biotechnology, to name a just a few.
  • scanning laser does not have sufficient resolution nor the needed throughput, scanning electron lithography is too slow, and deep-UV lithography (main workhorse for semiconductor ICs) is too expensive for the most products outside of IC and is unapplicable to the flexible or thin film substrates and/or the area larger than 300 mm diameter.
  • Nanoimprint is regarded as one of emerging technologies that will change the world and one of the most important manufacturing technologies in the 21 st century.
  • nanoimprint faces the same challenge as other nanomanufacturing: generation complex nanostructures over large area—although in nanoimprint, such generation is needed only once: the master mold. Hence, making the master mold with large area complex nanostructures is the most serious obstacle or the Achilles in nanoimprint.
  • the invention is related to the methods to generate complex nanostructures over a large area without using electron beam lithography (EBL) or the like.
  • EBL electron beam lithography
  • MSN multi-set nanopatterning
  • the MSN comprises three innovative nonconventional technologies and their creative superposition(s) (i.e. multiple uses).
  • the three technologies are (i) Fourier nanoimprint patterning (FNP), (ii) edge-guided nanopatterning (EGN), and (iii) nanostructure self-perfection.
  • FNP Fourier nanoimprint patterning
  • ENN edge-guided nanopatterning
  • nanostructure self-perfection Just each individual technology alone, it already can create new complex nanostructures over a large area that could not be generated before; but when combined together, they can generate far more complex nanopatterns over a large area.
  • the proposed research will advance new approaches in nanoimprint mold duplication and will use large area nanoplasmonics and roll-to-roll nanoimprint as test bed for the technologies to be developed.
  • the research outcomes are expected to have transformative impacts to nanomanufacturing and multiple multi-billion-dollar industrial fields.
  • MSN multi-set-nanopatterning
  • MSN includes three types of paradigm-shift nanofabrication technologies as well as creative superposition(s) (i.e. multiple uses and different combinations) of them ( FIG. 2 ).
  • the three paradigm-shift technologies are (i) Fourier nanoimprint patterning (FPN) ( FIG. 5 ), (ii) edge-guided nanopatterning (EGN) ( FIG.
  • FNP Fourier Nanoimprint Patterning creates a desired final complex nanopattern by superpositioning its Fourier components.
  • the final nanopattern is a result of several nanoimprints of “simple patterns”, each of them is one or several Fourier components of the final nanopattern (e.g. gratings or grids with different periods)
  • the superposition is done by sequentially adding a new simple pattern onto the patterns that are already imprinted and fabricated on a substrate.
  • FNP can generate large-area complex nanostructures, because (a) currently large-area linear nanogratings become commercially available, and (b) nanoimprint allows making daughter molds for intermediate and final nanostructures to be made, which greatly simplifies the fabrication process and cost of FNP.
  • Edge-guided nanopatterning uses an edge(s) of an existing micro/nanoscale patter to create smaller and/or complex patterns. For example, EGN “converts” a micro-rectangle into a nanowire, and a nano-cylinder into nanoring; and for a lesser known example, a micro-rectangle into nanosplit and a symmetric micropattern into an asymmetric nanopattern ( FIG. 10 , 11 ).
  • Nanostructure self-perfection is a class of methods that changes an imperfect structure into perfect one.
  • the main focus here will be “nanostructure self-perfection by liquefaction” (SPEL), although other self-perfection methods will also be used.
  • FNP Fourier nanoimprint patterning
  • FNP can create complex nanopatterns over an area, as large as several meter squares, because of four facts: (1) every pattern is a superposition of Fourier components which in turn are either simple linear gratings themselves or a superposition of linear gratings; (2) large-area (square-meters area) nanogratings are now commercially available; (3) multiple methods can be used to manipulate some Fourier components, and (4) nanoimprint can be used to make daughter molds for FPN's intermediate nanostructures, which greatly simplifies the fabrication process and cost of FNP.
  • FNP The FNP concept was originated by the PI in 1998 for forming large-area periodic nanopillar/hole array]. Recently, the PI proposed new approaches to further advance FNP concept for fabrication of much more complex nanostructures over a large area, which will be a key part of the proposed research. Below, we use some of our work as examples to illustrate FNP and discuss the proposed research in FNP. However, it should be pointed out: FNP can be used many different ways to generate different nanostructures, hence the illustrations here are just a very small set of broad possibilities.
  • a 2D nanopillar/nanogrid array can be generated by superpositioning two linear gratings (each represents one Fourier component) with one in x-direction and another in y-direction.
  • a master mold of 200 nm period linear grating over entire 4′′ wafer by interference lithography ( FIG. 4 )].
  • the linear grating master mold is used to fabricate a daughter mold in two cycles of nanoimprinting and Cr lift-off. The first cycle creates a Cr linear grating on the daughter mold substrate. The second cycle, which puts the master mold perpendicular to the direction of the first Cr grating, generates a final Cr pattern of nanogrid on the daughter mold substrate.
  • Cr grid is used as an etching mask in etching the substrate and is removed after the etching, leaving a 2D nanogrid daughter mold ( FIG. 3 ).
  • nanostructures that have a broad band of resonant frequencies rather than a single frequency for manipulating light.
  • Such applications include solar cells and LEDs which are broad band optical devices.
  • a broad band frequency can be only achieved by using nanostructures that are equivalent of a superposition of multiple different-frequency Fourier components (i.e. multiple different period linear gratings).
  • Such broad brand structures are very difficult to generate by conventional approaches.
  • double imprint of pillar-array (DIP)
  • DIP double imprint of pillar-array
  • the principle of DIP is to create a final complex broad-band structure by double cycles of nanoimprint and Cr deposition using a pillar-array mold.
  • the pillar mold was made, in turn, by double cycles of imprinting/fabrication of a linear grating mold, and the two gratings are not in 90 degrees (orthogonal direction) but having h a rotation angle offset of ⁇ 1 ( FIG. 5 ).
  • the two imprints are further offset by another angle offset of ⁇ 2 .
  • the 3D Cr become a complex 2D patterns in the daughter mold, that have nanopillar array with linearly varying pillar shape, spacing (pillar period) and density.
  • pillar period spacing
  • density density
  • L is the repeat unit length of the superpositioned pattern (i.e. the (rhombus) edge length in FIG. 6B );
  • p is the original linear grating period;
  • ⁇ is defined as the linear increment of the center-to-center distance of the adjacent dots along the long range pattern unit edges.
  • Sub-nm increment could be achieved with this method, if the second alignment mismatch angle can be further reduced (e.g. smaller than 0.28° for 200 nm pitch).
  • the density of the dots will be doubled after the center-to-center distance goes larger than the dot diameter, or, in other words, after the dots separate.
  • Detailed derivation of the center positions of pillars is shown in supplement material.
  • ⁇ right arrow over (k i ) ⁇ is the grating wavevector (
  • ⁇ right arrow over (r) ⁇ is the position vector in x-y plane, a i is the i th amplitude, and b i is the phase difference (duo to the linear shift).
  • Edge-guided nanopatterning uses an edge(s) of an existing micro/nanoscale pattern to guide the creation of smaller and/or complex nanopatterns.
  • EGN provides three powerful and unique capabilities in nanofabrication.
  • (1) EGN creates a nanostructure from a microstructure and does not need nanostructure mask/mold.
  • a well-known example is a shadowing or deposition on the sidewall of a microstructure. Therefore large area microstructures (e.g. display size) can be created first and then are turned into large-area nanostructures ( FIG. 7 ).
  • the PI used such an approach to fabricate 60 nm MOSFETs about ⁇ 30 years ago; and EGN is also used in modern IC fabrication, being called “double patterning”.
  • (3) EGN creates aperiodic structure from a periodic structures. Let us give examples in (2) and (3).
  • a large-area nano-pillar array is fabricated (e.g. using FPN discussed before), it can be turned into a large-area nano-ring array by EGN.
  • One way to do it is to conformably deposit a thin layer on the pillars and etch away the materials deposited on the pillar's top and foot, but not on the sidewall, and then selectively etching away the pillars, leaving the materials deposited on the sidewall on the substrate, forming the ring array (e.g. SiO2 pillars with SiNx as the deposited material).
  • the conformal material deposition also can be replaced by oxidization of Si (e.g. the nano-rings we fabricated FIG. 8 )
  • Large-area nanoscale single-split ring array also can be fabricated from nanopillar array using EGN.
  • the first few steps of the fabrication are similar to that for the nanoring array. But during the anisotropic (vertically) etching of the deposited material on the top and bottom of the pillar, the etching time is made to be sufficient longer, so that after the etching the height of the material deposited on pillar sidewall is much lower than pillar height, making a part of the pillar stick out (e.g. SiO2 pillar SiNx conformal deposition). Then a shadow evaporation of Cr from an angle will deposit Cr everywhere on the sample surface, except behind the stick-out pillar (similar to the shadow of a telephone pole under the 10 am sun).
  • the Cr will be used as an etching mask, and the etching will etch only the area that is not covered by the Cr (i.e. the shadow), which cuts through each ring.
  • a single-split ring mold is generated ( FIG. 9. 10 , 11 ).
  • EGN can be used to generate large area double-split nanoring arrays.
  • the starting nanopattern is a square pillar array.
  • An EGN is used to create a square-ring mold. The mold then imprints square ring trenches in a resist on a substrate. Then in a second EGN, where three shadow evaporations of Cr from different angles guided by the edges of each square ring, creates Cr square rings, each has a double split.
  • the Cr is used as the etching mask in etching the substrate, which becomes the final daughter mold of double-split ring array.
  • the final complex pattern is determined by the starting material shape, the edges used as the guiding, deposition (or growth) of the materials, the deposition angles, the number of depositions, etc. as well as the combination (and or repeat) of different individual parameters.
  • EGN the final complex pattern is determined by the starting material shape, the edges used as the guiding, deposition (or growth) of the materials, the deposition angles, the number of depositions, etc. as well as the combination (and or repeat) of different individual parameters.
  • EGN the possibilities of EGN are unlimited, as said before. We will explore each of these parameters and their combinations.
  • Such patterns include triangle array, bowtie array, various complex patterns needed for our nanoplasmonic solar cell and LED test-bed (See Task 6).
  • Nanopatterning defects the deviations of nanostructure shapes from the ideal design, are unavoidable in any nanofabrication methods today, and become worse as a nanofabrication method is near its intrinsic limit.
  • the defects include edge roughness, slopped sidewall, rounded top, small aspect-ratio, and non-circularness of circles/disks, etc.
  • an alternative approach to remove the fabrication defects is to remove the defects after the fabrication, rather than change the fabrication method.
  • the removal method must be “self-perfecting”, which means “one simple action” removes the defects everywhere on the entire large-area sample.
  • SPEL self-perfection by liquefaction
  • C-SPEL Capped-SPEL
  • C-SPEL Capped-SPEL
  • the top surface of the structure is no longer free, but has to be flat and in contact with the top plate during the flow (“liquid”) state, leading to a flat top and vertical smooth sidewall after the flow.
  • the vertical sidewall is also required by the energy minimum, which first observed by us and later proved theoretically using a simple parallel capacitor model).
  • Gapped-SPEL Another new set of boundary conditions that we developed is “Gapped-SPEL” (G-SPEL), which puts a single plate on top of the structures to be perfected but with a gap between the two (i.e. no contact). Under the G-SPEL boundary condition, during the flow, the structure to be perfected raises up to touch the surface of the top plate, making the structure narrower, taller, and with smooth, vertical sidewall. G-SPEL has been demonstrated in both for Si and Cr.
  • Such self-perfection technologies will also be used in MNF, although it is not the major research focus here.
  • Such technologies include (i) crystalline anisotropic etching to remove line edge roughness (LER) (e.g. etching with the grating lines aligned to the (111) planes of a (110) orientation Si wafer), and (ii) guided-self-assembly of diblock copolymers, where we have extended researches previously.
  • LER line edge roughness
  • Multi-set-nanopatterning is a paradigm-shift approach to creating complex nanostructures over a large area, which uses three types of nonconventional nanofabrication technologies and creative superposition(s) (or multiple uses) of these technologies.
  • the three paradigm-shift technologies are (i) Fourier nanoimprint patterning, (ii) edge-guided nanopatterning, and (iii) nanostructure self-perfection by liquefaction.
  • the new solar cell termed plasmonic cavity with subwavelength hole-array” (PIaCSH) solar cells with a 85 nm thick photovoltaic layer (poly (3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methyl ester (P3HT/PCBM) bulk hetero-junction) have: (a) A light coupling-efficiency/absorptance as high as 96%, average 90%, broad-band, and Omni acceptance; and (b) a power conversion efficiency under standard solar irradiation that is 52% higher than the same structure except the cavity, and nearly 180% when in the cloudy day, due to the light acceptance is nearly independent of the incident angle.
  • PaCSH plasmonic cavity with subwavelength hole-array
  • roller nanoimprint As the first team to demonstrate roller nanoimprint (as well as planar nanoimprint), PI's group has several roller nanoimprint tools.
  • the roller nanoimprint tools will be used as demonstrate for the large-area complex nanostructures.
  • the mold duplication process is simple and fast by depositing polymer layers and bonding a backplane
  • the front size layer is customer high-Young's modulus polymer rather than soft PDMS, giving high imprint resolution and fidelity
  • the mold has an easy demolding surface
  • the mold is flexible.
  • HIF2M High-fidelity flexible mold
  • the very top layer is high-fidelity fluorinated polymer, as carrier layer of nanopatterns; the top layer is bonded by the middle layer on to the flexible substrate.
  • the high-fidelity fluorinated polymer features a fluorine-rich backbone structure with optimal molecular weight, so it exhibits high stiffness (>90 MPa), low surface energy, and high chemical stability. Those features allow sub-30 nm high-resolution patterns, easy mold release, and chemical mold cleaning, respectively.

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