[go: up one dir, main page]

US20130104970A1 - Four junction solar cell - Google Patents

Four junction solar cell Download PDF

Info

Publication number
US20130104970A1
US20130104970A1 US13/651,969 US201213651969A US2013104970A1 US 20130104970 A1 US20130104970 A1 US 20130104970A1 US 201213651969 A US201213651969 A US 201213651969A US 2013104970 A1 US2013104970 A1 US 2013104970A1
Authority
US
United States
Prior art keywords
layer
solar cell
tunnel junction
emitter
ingasb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/651,969
Inventor
Indranil Bhattacharya
Simon Y. Foo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Florida State University Research Foundation Inc
Original Assignee
Florida State University Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Florida State University Research Foundation Inc filed Critical Florida State University Research Foundation Inc
Priority to US13/651,969 priority Critical patent/US20130104970A1/en
Assigned to FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION, INC. reassignment FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BHATTACHARYA, INDRANIL, FOO, SIMON Y.
Publication of US20130104970A1 publication Critical patent/US20130104970A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H01L31/03046—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the present disclosure relates to solar cells and in particular a quadruple-junction solar cell having AlGaInP/InGaP/InGaAs/InGaSb or AlGaInP/InGaAs/GaSb/InGaSb materials.
  • germanium is expensive resulting in a solar cell that is not cost-effective.
  • Disclosed herein is a four-junction solar cell having a higher photon absorption than typical triple-junction solar cells.
  • the combination of subcell layers further discussed below effectively splits the solar radiation spectrum resulting in higher photon absorption.
  • the semiconductor materials used to design the subcells of the four-junction solar cell disclosed herein are direct bandgap semiconductors unlike the indirect bandgap germanium (Ge) layers used in typical solar cells.
  • Ga germanium
  • the momentum of electrons in the valence band and conduction band are the same so the electrons can jump directly from the valence band to the conduction band unlike the indirect bandgap Ge layer. Some energy is lost due to indirect transfer of electrons from valence to conduction band through creation of phonon particle in case of Ge.
  • the solar cell includes a first layer comprised of AlGaInP, a second layer comprised of InGaAs, a third layer comprised of GaSb, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers.
  • the solar cell includes a first layer comprised of AlGaInP, a second layer comprised of InGaP, a third layer comprised of InGaAs, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers.
  • the solar cell includes a first layer comprised of AlGaInP, a second layer comprised of GaAs, a third layer comprised of InGaAs, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers.
  • FIG. 1 is a cross-sectional view of a quadruple junction solar cell in accordance with an embodiment of the present invention
  • FIG. 2 is a cross-sectional view of a quadruple junction solar cell in accordance with an alternate embodiment of the present invention
  • FIG. 3 is a cross-sectional view of a quadruple junction solar cell in accordance with yet another embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a quadruple junction solar cell in accordance with still another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a quadruple junction solar cell in accordance with a further embodiment of the present invention.
  • FIG. 6 is a graphical representation of the photon absorption efficiency of an embodiment of the four junction solar cell of the present invention including aluminum gallium indium phosphide (AlGaInP)/indium gallium phosphide (InGaP)/indium gallium arsenide (InGaAs)/indium gallium antimonide (InGaSb) semiconductor materials;
  • AlGaInP aluminum gallium indium phosphide
  • InGaP indium gallium phosphide
  • InGaAs indium gallium arsenide
  • InGaSb indium gallium antimonide
  • FIG. 7 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a crystalline silicon solar cell and with a cadmium telluride (CdTe) solar cell;
  • FIG. 8 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell;
  • AlGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • FIG. 9 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (InGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell;
  • InGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • InGaAs indium gallium arsenide
  • FIG. 10 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell;
  • GaInP gallium indium phosphide
  • GaInAs gallium indium arsenide
  • Gae germanium
  • FIG. 11 is a graphical view of the photon absorption efficiency of an alternate embodiment of the four junction photovoltaic cell of the present invention including aluminum gallium indium phosphide (AlGaInP)/indium gallium arsenide (InGaAs)/gallium antimonide (GaSb)/indium gallium antimonide (InGaSb) semiconductor materials;
  • AlGaInP aluminum gallium indium phosphide
  • InGaAs indium gallium arsenide
  • GaSb gallium antimonide
  • InGaSb indium gallium antimonide
  • FIG. 12 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a crystalline silicon solar cell and with a cadmium telluride (CdTe) solar cell;
  • FIG. 13 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell;
  • AlGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • FIG. 14 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell;
  • AlGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • InGaAs indium gallium arsenide
  • FIG. 15 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell;
  • GaInP gallium indium phosphide
  • GaInAs gallium indium arsenide
  • Gae germanium
  • FIG. 16 is a graphical view comparing the photo absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium indium phosphide (AlGaInP)/aluminum gallium indium arsenide (AlGa(In)As/gallium indium arsenide(Ga(In)As/germanium (Ge) four-junction solar cell.
  • AlGaInP aluminum gallium indium phosphide
  • AlGa(In)As/gallium indium arsenide(Ga(In)As/germanium (Ge) four-junction solar cell AlGaInP
  • FIG. 17 is a graphical view of the photon absorption efficiency of yet another embodiment of the four junction photovoltaic cell of the present invention including aluminum gallium indium phosphide (AlGaInP)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs)/indium gallium antimonide (InGaSb) semiconductor materials.
  • AlGaInP aluminum gallium indium phosphide
  • GaAs gallium arsenide
  • InGaAs indium gallium arsenide
  • InGaSb indium gallium antimonide
  • the invention is drawn to a photovoltaic cell, also referred to as a solar cell, with improved absorption of electromagnetic radiation over the entire solar spectrum.
  • the solar cell of the present invention includes a first or top layer (also referred to as “first or top cell”), a second layer (or “second cell”), a third layer (or “third cell”) and a fourth or bottom layer (also referred to as a “fourth cell” or “bottom cell”), where each layer is separated by tunnel junctions, as shown in FIG. 1 .
  • a tunnel junction forms the ohmic electrical contact between consecutive solar cells layers for the purpose of passing electrons from one material to the other.
  • the term “cell,” e.g., “first cell,” “second cell,” or “layer”, is used to describe one or more semiconductor layers for absorbing electromagnetic radiation having a targeted band-gap energy, where the cell or layer is bound above and below by an antireflective coating, a tunnel, a passivation layer, a confinement layer, or a cladding layer.
  • the cells act to create electron-hole pairs when illuminated by light.
  • tunnel is used to describe heavily doped p + -n + junctions between cells indicating tunneling phenomena between the solar cell layers. Tunnels are used to make electrical, optical and/or mechanical connections between cells.
  • the top layer can be composed of aluminum gallium indium phosphide (AlGaInP), the second layer can be composed of indium gallium arsenide (InGaAs), the third layer can be composed of gallium antimony (GaSb), and the fourth layer can be composed of indium gallium antimonide (InGaSb).
  • ARC anti-reflective coating
  • MgO 2 +TiO 2 Magnesium Oxide and Titanium Oxide
  • Indium-Tin Oxide+MgF 2 Indium-Tin Oxide+MgF 2 .
  • FIG. 1 also shows an electrical circuit that is equivalent to the quadruple-junction photovoltaic cell layer depiction.
  • the top layer can include a 30 nm n + window layer, an n + AlGaInP emitter having a thickness between 40 and 50 nm and a p-type AlGaInP base having a thickness between 300 and 550 nm.
  • the second layer can include an n + In 0.1 Ga 0.9 As emitter with a thickness between 50 and 80 nm, a p-type In 0.1 Ga 0.9 As base with thickness between 600 and 800 nm and a back surface field (“BSF”) layer, which in one embodiment is 70 nm and composed of In 0.1 Ga 0.9 As.
  • the BSF layer provides confinement to the photogenerated minority carriers and keep them within the reach of p/n junctions to be efficiently collected.
  • the third layer can include an n + GaSb emitter having a thickness between 80 and 100 nm and a p-type GaSb base having a thickness between 800 and 1,000 nm.
  • the bottom layer can include a 30 nm n + nucleation layer upon which is disposed an n + In 0.5 Ga 0.5 Sb emitter having a thickness 90 and 120 nm and an In 0.5 Ga 0.5 Sb base having a thickness between 1,000 and 1,500 nm.
  • the emitter and base are disposed upon a p-type GaAs/InGaSb/GaSb substrate.
  • the top tunnel junction separating the top layer from the second layer is comprised of a 15 nm p ++ AlGaAs tunnel junction on top of a 15 nm n ++ AlGaInP tunnel junction.
  • the second tunnel junction separating the second layer from the third layer may include a 15 nm p ++ AlGaAs tunnel junction on top of a 15 nm n ++ In 0.5 Ga 0.5 As tunnel junction.
  • the third tunnel junction separating the second layer and the bottom layer may be composed of a 15 nm p ++ AlGaAs tunnel junction on top of a 15 nm n ++ GaSb tunnel junction.
  • a 1,500 nm buffer may separate the third tunnel junction and the bottom layer.
  • FIG. 2 an alternate embodiment of the present invention is shown.
  • the substrate shown in FIG. 2 includes the same materials as the embodiment of FIG. 1 , but with slightly different dimensions.
  • the emitter is composed of In 0.23 Ga 0.77 As and the base is composed of In 0.23 Ga 0.77 As.
  • the second tunnel junction, i.e. the junction between the second layer and the third layer is composed of a 70 nm BSF layer of In 0.23 Ga 0.77 As.
  • the bottom layer may include an n + emitter composed of In 0.23 Ga 0.77 Sb and a base composed of In 0.23 Ga 0.77 Sb.
  • the photovoltaic cell depicted in FIG. 3 represents another embodiment of the present invention.
  • the materials forming the substrate are different than the materials forming the substrates shown in FIGS. 1 and 2 .
  • An ARC resides on top of the substrate and a metal contact resides on the bottom.
  • the top layer is composed of a 30 nm n + window layer, an n + aluminum gallium indium phosphide (AlGaInP) emitter having a thickness of between 40 and 50 nm and an AlGaInP base between 300 and 550 nm in thickness.
  • AlGaInP aluminum gallium indium phosphide
  • the second layer is composed of an n + In 0.5 Ga 0.5 P emitter having a thickness between 50 and 80 nm, a p-type In 0.5 Ga 0.5 P base between 600 and 800 nm and a 70 nm BSF layer composed of In 0.5 Ga 0.5 P.
  • the third layer is composed of an n + In 0.1 Ga 0.9 As emitter having a thickness between 80 and 100 nm, a p-type In 0.1 Ga 0.9 As base between 800 and 1000 nm and an 80 nm p + In 0.1 Ga 0.9 As BSF layer.
  • the bottom layer includes an n + In 0.5 Ga 0.5 Sb emitter having a thickness between 90 and 120 nm and a p-type In 0.5 Ga 0.5 Sb base between 1,000 and 1,500 nm.
  • FIG. 4 depicts yet another embodiment of the present invention.
  • the substrate includes the same materials as the substrate shown in FIG. 3 but with different dimensions.
  • the second layer includes an n + In 0.23 Ga 0.77 P emitter between 50 and 80 nm, a p-type In 0.23 Ga 0.77 P base between 600 and 800 nm and a 70 nm In 0.23 Ga 0.77 P BSF layer.
  • the third layer includes an n + In 0.23 Ga 0.77 As emitter between 80 and 100 nm, a p-type In 0.23 Ga 0.77 As base between 800 and 1,000 nm and an 80 nm p + In 0.23 Ga 0.77 As BSF layer.
  • the bottom layer may include an n + In 0.23 Ga 0.77 Sb emitter having a thickness between 90 and 120 nm and a p-type In 0.23 Ga 0.77 Sb base between 1,000 and 1,500 nm.
  • FIG. 5 illustrates still another embodiment of the present invention.
  • the substrate shown in FIG. 5 includes a different composition of materials when compared to the earlier embodiments.
  • the second layer may include an n + GaAs emitter between 50 and 80 nm, a p-type GaAs base between 80 and 100 nm and a 70 nm p + GaAs BSF layer.
  • the second tunnel junction between the second and third layers may include a 15 nm p ++ AlGaAs tunnel junction disposed upon a 15 nm n ++ GaAs tunnel junction.
  • the third layer may include an n + In 0.1-0.23 Ga 0.77-0.9 AS emitter having a thickness between 80 and100 nm and a p-type In 0.1-0.23 Ga 0.77-0.9 AS base between 800 and 1,000 nm.
  • the third tunnel junction between the third and fourth layers may include a 15 nm p ++ AlGaAs tunnel junction disposed upon a 15 nm n ++ In 0.5 Ga 0.5 As tunnel junction and a 1,500 nm n-type buffer layer.
  • the fourth or bottom layer may include, in addition to a 30 nm n + nucleation layer, an n + In 0.5 Ga 0.5 Sb emitter between 90 and 120 nm and a p-type In 0.5 Ga 0.5 Sb base between 1,000 and 1,500 nm disposed upon a p-type GaAs/InGaSb substrate.
  • FIG. 6 is a graphical representation of the photon absorption efficiency of an embodiment of the four junction photovoltaic cell of the present invention.
  • the four junctions of the photovoltaic cell are composed of aluminum gallium indium phosphide (AlGaInP) (having a band gap between 2.23 and 2.33 electron volts), indium gallium phosphide (InGaP) (with a band gap between 1.7 and 1.93 electron volts), indium gallium arsenide (InGaAs) (with a band gap of 1.1 electron volts) and indium gallium antimonide (InGaSb) (having a band gap of 0.3 to 0.5 electron volts).
  • AlGaInP aluminum gallium indium phosphide
  • InGaP indium gallium phosphide
  • InGaAs indium gallium arsenide
  • InGaSb indium gallium antimonide
  • FIG. 7 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a crystalline silicon solar cell and with a cadmium telluride (CdTe) solar cell.
  • FIG. 8 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell.
  • AlGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • FIG. 9 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (InGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell.
  • InGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • InGaAs indium gallium arsenide
  • FIG. 10 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell.
  • GaInP gallium indium phosphide
  • GaInAs gallium indium arsenide
  • Gae germanium
  • FIG. 11 is a graphical representation of the photon absorption efficiency of an alternate embodiment of the four junction photovoltaic cell of the present invention.
  • the four junctions of the photovoltaic cell are composed of aluminum gallium indium phosphide (AlGaInP) (having a band gap between 2.23 and 2.33 electron volts), indium gallium arsenide (InGaAs) (with a band gap of 1.1 electron volts), gallium antimony (GaSb) (with a band gap of 0.7 electron volts) and indium gallium antimony (InGaSb) (having a band gap of 0.3 to 0.5 electron volts).
  • AlGaInP aluminum gallium indium phosphide
  • InGaAs indium gallium arsenide
  • GaSb gallium antimony
  • InGaSb indium gallium antimony
  • FIG. 12 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a crystalline silicon (Si) solar cell and with a cadmium telluride (CdTe) solar cell.
  • FIG. 13 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell.
  • AlGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • FIG. 14 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell.
  • AlGaAs aluminum gallium arsenide
  • GaAs gallium arsenide
  • InGaAs indium gallium arsenide
  • FIG. 15 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell.
  • GaInP gallium indium phosphide
  • GaInAs gallium indium arsenide
  • Gae germanium
  • FIG. 16 is a graphical view comparing the photo absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium indium phosphide (AlGaInP)/aluminum gallium indium arsenide (AlGa(In)As/gallium indium arsenide(Ga(In)As/germanium (Ge) four-junction solar cell.
  • AlGaInP aluminum gallium indium phosphide
  • AlGa(In)As/gallium indium arsenide(Ga(In)As/germanium (Ge) four-junction solar cell AlGaInP
  • FIG. 17 illustrates the photon absorption efficiency of another embodiment of the solar cell of the present invention.
  • This embodiment is a four-junction solar cell having as its junctions, aluminum gallium indium phosphide (AlGaInP) (with a band gap of between 2.23 and 2.33 electron volts), gallium arsenide (GaAs) (with a band gap of 1.43 electron volts), indium gallium arsenide (InGaAs) (with a band gap of 1.1 electron volts), and indium gallium antimonide (InGaSb) (with a band gap between 0.3 and 0.5 electron volts).
  • AlGaInP aluminum gallium indium phosphide
  • GaAs gallium arsenide
  • InGaAs indium gallium arsenide
  • InGaSb indium gallium antimonide

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A four-junction solar cell including a first layer comprised of AlGaInP, a second layer comprised of InGaAs, a third layer comprised of GaSb, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers. Alternately, the four-junction solar cell includes AlGaInP as the top layer, InGaP as the second layer, InGaAs as the third layer and InGaSb as the bottom layer. Tunnel junctions are disposed in between each layer. An alternate solar cell design includes AlGaInP/GaAs/InGaAs/InGaSb layers.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This Application claims priority to U.S. Provisional Patent Application No. 61/547,303, filed Oct. 14, 2011, entitled FOUR JUNCTION SOLAR CELL, the entirety of which is incorporated herein by reference.
    • STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
  • N/A
    • FIELD OF THE INVENTION
  • The present disclosure relates to solar cells and in particular a quadruple-junction solar cell having AlGaInP/InGaP/InGaAs/InGaSb or AlGaInP/InGaAs/GaSb/InGaSb materials.
    • BACKGROUND OF THE INVENTION
  • Existing solar cells do not provide adequate photon absorption. Many typical solar cells utilize indirect bandgap germanium (Ge) layers as part of a triple-layer cell. This results in a loss of energy due to indirect transfer of electrons from the valence band to the conduction band through the creation of a phonon particle.
  • In addition, germanium is expensive resulting in a solar cell that is not cost-effective.
  • Therefore, what is needed is a four-junction solar cell that provides higher photon absorption than the typical three-junction solar cells in today's market and that is also cost-effective.
    • SUMMARY OF THE INVENTION
  • Disclosed herein is a four-junction solar cell having a higher photon absorption than typical triple-junction solar cells. The combination of subcell layers further discussed below effectively splits the solar radiation spectrum resulting in higher photon absorption.
  • The semiconductor materials used to design the subcells of the four-junction solar cell disclosed herein are direct bandgap semiconductors unlike the indirect bandgap germanium (Ge) layers used in typical solar cells. For direct bandgap semiconductors, the momentum of electrons in the valence band and conduction band are the same so the electrons can jump directly from the valence band to the conduction band unlike the indirect bandgap Ge layer. Some energy is lost due to indirect transfer of electrons from valence to conduction band through creation of phonon particle in case of Ge.
  • In one aspect of the invention, the solar cell includes a first layer comprised of AlGaInP, a second layer comprised of InGaAs, a third layer comprised of GaSb, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers.
  • In another aspect of the invention, the solar cell includes a first layer comprised of AlGaInP, a second layer comprised of InGaP, a third layer comprised of InGaAs, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers.
  • In another aspect, the solar cell includes a first layer comprised of AlGaInP, a second layer comprised of GaAs, a third layer comprised of InGaAs, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional view of a quadruple junction solar cell in accordance with an embodiment of the present invention;
  • FIG. 2 is a cross-sectional view of a quadruple junction solar cell in accordance with an alternate embodiment of the present invention;
  • FIG. 3 is a cross-sectional view of a quadruple junction solar cell in accordance with yet another embodiment of the present invention;
  • FIG. 4 is a cross-sectional view of a quadruple junction solar cell in accordance with still another embodiment of the present invention;
  • FIG. 5 is a cross-sectional view of a quadruple junction solar cell in accordance with a further embodiment of the present invention;
  • FIG. 6 is a graphical representation of the photon absorption efficiency of an embodiment of the four junction solar cell of the present invention including aluminum gallium indium phosphide (AlGaInP)/indium gallium phosphide (InGaP)/indium gallium arsenide (InGaAs)/indium gallium antimonide (InGaSb) semiconductor materials;
  • FIG. 7 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a crystalline silicon solar cell and with a cadmium telluride (CdTe) solar cell;
  • FIG. 8 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell;
  • FIG. 9 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (InGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell;
  • FIG. 10 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell;
  • FIG. 11 is a graphical view of the photon absorption efficiency of an alternate embodiment of the four junction photovoltaic cell of the present invention including aluminum gallium indium phosphide (AlGaInP)/indium gallium arsenide (InGaAs)/gallium antimonide (GaSb)/indium gallium antimonide (InGaSb) semiconductor materials;
  • FIG. 12 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a crystalline silicon solar cell and with a cadmium telluride (CdTe) solar cell;
  • FIG. 13 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell;
  • FIG. 14 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell;
  • FIG. 15 is a graphical view comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell;
  • FIG. 16 is a graphical view comparing the photo absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium indium phosphide (AlGaInP)/aluminum gallium indium arsenide (AlGa(In)As/gallium indium arsenide(Ga(In)As/germanium (Ge) four-junction solar cell.
  • FIG. 17 is a graphical view of the photon absorption efficiency of yet another embodiment of the four junction photovoltaic cell of the present invention including aluminum gallium indium phosphide (AlGaInP)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs)/indium gallium antimonide (InGaSb) semiconductor materials.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • The invention is drawn to a photovoltaic cell, also referred to as a solar cell, with improved absorption of electromagnetic radiation over the entire solar spectrum. The solar cell of the present invention includes a first or top layer (also referred to as “first or top cell”), a second layer (or “second cell”), a third layer (or “third cell”) and a fourth or bottom layer (also referred to as a “fourth cell” or “bottom cell”), where each layer is separated by tunnel junctions, as shown in FIG. 1. A tunnel junction forms the ohmic electrical contact between consecutive solar cells layers for the purpose of passing electrons from one material to the other.
  • As used herein, the term “cell,” e.g., “first cell,” “second cell,” or “layer”, is used to describe one or more semiconductor layers for absorbing electromagnetic radiation having a targeted band-gap energy, where the cell or layer is bound above and below by an antireflective coating, a tunnel, a passivation layer, a confinement layer, or a cladding layer. The cells act to create electron-hole pairs when illuminated by light.
  • As used herein, the term “tunnel” is used to describe heavily doped p+-n+ junctions between cells indicating tunneling phenomena between the solar cell layers. Tunnels are used to make electrical, optical and/or mechanical connections between cells.
  • In the embodiment of FIG. 1, the top layer can be composed of aluminum gallium indium phosphide (AlGaInP), the second layer can be composed of indium gallium arsenide (InGaAs), the third layer can be composed of gallium antimony (GaSb), and the fourth layer can be composed of indium gallium antimonide (InGaSb). On top of the first layer is an anti-reflective coating (“ARC”) such as Magnesium Oxide and Titanium Oxide (MgO2+TiO2) or Indium-Tin Oxide+MgF2. A rear metal contact is formed on the bottom of the substrate, i.e. below the bottom layer. FIG. 1 also shows an electrical circuit that is equivalent to the quadruple-junction photovoltaic cell layer depiction.
  • In the embodiment shown in FIG. 1, the top layer can include a 30 nm n+ window layer, an n+ AlGaInP emitter having a thickness between 40 and 50 nm and a p-type AlGaInP base having a thickness between 300 and 550 nm. The second layer can include an n+ In0.1Ga0.9As emitter with a thickness between 50 and 80 nm, a p-type In0.1Ga0.9As base with thickness between 600 and 800 nm and a back surface field (“BSF”) layer, which in one embodiment is 70 nm and composed of In0.1Ga0.9As. The BSF layer provides confinement to the photogenerated minority carriers and keep them within the reach of p/n junctions to be efficiently collected. The third layer can include an n+ GaSb emitter having a thickness between 80 and 100 nm and a p-type GaSb base having a thickness between 800 and 1,000 nm. The bottom layer can include a 30 nm n+ nucleation layer upon which is disposed an n+ In0.5Ga0.5Sb emitter having a thickness 90 and 120 nm and an In0.5Ga0.5Sb base having a thickness between 1,000 and 1,500 nm. The emitter and base are disposed upon a p-type GaAs/InGaSb/GaSb substrate.
  • The top tunnel junction separating the top layer from the second layer is comprised of a 15 nm p++ AlGaAs tunnel junction on top of a 15 nm n ++ AlGaInP tunnel junction. The second tunnel junction separating the second layer from the third layer may include a 15 nm p++ AlGaAs tunnel junction on top of a 15 nm n++ In0.5Ga0.5As tunnel junction. The third tunnel junction separating the second layer and the bottom layer may be composed of a 15 nm p++ AlGaAs tunnel junction on top of a 15 nm n++ GaSb tunnel junction. A 1,500 nm buffer may separate the third tunnel junction and the bottom layer.
  • In FIG. 2, an alternate embodiment of the present invention is shown. The substrate shown in FIG. 2 includes the same materials as the embodiment of FIG. 1, but with slightly different dimensions. For example, in the second layer, the emitter is composed of In0.23Ga0.77As and the base is composed of In0.23Ga0.77As. The second tunnel junction, i.e. the junction between the second layer and the third layer is composed of a 70 nm BSF layer of In0.23Ga0.77As. The bottom layer may include an n+ emitter composed of In0.23Ga0.77Sb and a base composed of In0.23Ga0.77Sb.
  • The photovoltaic cell depicted in FIG. 3 represents another embodiment of the present invention. In this embodiment, the materials forming the substrate are different than the materials forming the substrates shown in FIGS. 1 and 2. An ARC resides on top of the substrate and a metal contact resides on the bottom. The top layer is composed of a 30 nm n+ window layer, an n+ aluminum gallium indium phosphide (AlGaInP) emitter having a thickness of between 40 and 50 nm and an AlGaInP base between 300 and 550 nm in thickness. The second layer is composed of an n+ In0.5Ga0.5P emitter having a thickness between 50 and 80 nm, a p-type In0.5Ga0.5P base between 600 and 800 nm and a 70 nm BSF layer composed of In0.5Ga0.5P. The third layer is composed of an n+ In0.1Ga0.9As emitter having a thickness between 80 and 100 nm, a p-type In0.1Ga0.9As base between 800 and 1000 nm and an 80 nm p+ In0.1Ga0.9As BSF layer. The bottom layer includes an n+ In0.5Ga0.5Sb emitter having a thickness between 90 and 120 nm and a p-type In0.5Ga0.5Sb base between 1,000 and 1,500 nm.
  • FIG. 4 depicts yet another embodiment of the present invention. The substrate includes the same materials as the substrate shown in FIG. 3 but with different dimensions. For example, the second layer includes an n+ In0.23Ga0.77P emitter between 50 and 80 nm, a p-type In0.23Ga0.77P base between 600 and 800 nm and a 70 nm In0.23Ga0.77P BSF layer. The third layer includes an n+ In0.23Ga0.77As emitter between 80 and 100 nm, a p-type In0.23Ga0.77As base between 800 and 1,000 nm and an 80 nm p+ In0.23Ga0.77As BSF layer. The bottom layer may include an n+ In0.23Ga0.77Sb emitter having a thickness between 90 and 120 nm and a p-type In0.23Ga0.77Sb base between 1,000 and 1,500 nm.
  • FIG. 5 illustrates still another embodiment of the present invention. The substrate shown in FIG. 5 includes a different composition of materials when compared to the earlier embodiments. For example, the second layer may include an n+ GaAs emitter between 50 and 80 nm, a p-type GaAs base between 80 and 100 nm and a 70 nm p+ GaAs BSF layer. The second tunnel junction between the second and third layers may include a 15 nm p++ AlGaAs tunnel junction disposed upon a 15 nm n++ GaAs tunnel junction. The third layer may include an n+ In0.1-0.23Ga0.77-0.9AS emitter having a thickness between 80 and100 nm and a p-type In0.1-0.23Ga0.77-0.9AS base between 800 and 1,000 nm. The third tunnel junction between the third and fourth layers may include a 15 nm p++ AlGaAs tunnel junction disposed upon a 15 nm n++ In0.5Ga0.5As tunnel junction and a 1,500 nm n-type buffer layer. The fourth or bottom layer may include, in addition to a 30 nm n+ nucleation layer, an n+ In0.5Ga0.5Sb emitter between 90 and 120 nm and a p-type In0.5Ga0.5Sb base between 1,000 and 1,500 nm disposed upon a p-type GaAs/InGaSb substrate.
  • FIG. 6 is a graphical representation of the photon absorption efficiency of an embodiment of the four junction photovoltaic cell of the present invention. The four junctions of the photovoltaic cell are composed of aluminum gallium indium phosphide (AlGaInP) (having a band gap between 2.23 and 2.33 electron volts), indium gallium phosphide (InGaP) (with a band gap between 1.7 and 1.93 electron volts), indium gallium arsenide (InGaAs) (with a band gap of 1.1 electron volts) and indium gallium antimonide (InGaSb) (having a band gap of 0.3 to 0.5 electron volts).
  • FIG. 7 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a crystalline silicon solar cell and with a cadmium telluride (CdTe) solar cell.
  • FIG. 8 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell.
  • FIG. 9 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with an aluminum gallium arsenide (InGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell.
  • FIG. 10 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 6 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell.
  • FIG. 11 is a graphical representation of the photon absorption efficiency of an alternate embodiment of the four junction photovoltaic cell of the present invention. The four junctions of the photovoltaic cell are composed of aluminum gallium indium phosphide (AlGaInP) (having a band gap between 2.23 and 2.33 electron volts), indium gallium arsenide (InGaAs) (with a band gap of 1.1 electron volts), gallium antimony (GaSb) (with a band gap of 0.7 electron volts) and indium gallium antimony (InGaSb) (having a band gap of 0.3 to 0.5 electron volts).
  • FIG. 12 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a crystalline silicon (Si) solar cell and with a cadmium telluride (CdTe) solar cell.
  • FIG. 13 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs) two-junction solar cell.
  • FIG. 14 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium arsenide (AlGaAs)/gallium arsenide (GaAs)/indium gallium arsenide (InGaAs) triple-junction solar cell.
  • FIG. 15 is a graphical representation comparing the photon absorption efficiency of the four-junction solar cell of FIG. 11 with a gallium indium phosphide (GaInP)/gallium indium arsenide (GaInAs)/germanium (Ge) triple-junction solar cell.
  • FIG. 16 is a graphical view comparing the photo absorption efficiency of the four-junction solar cell of FIG. 11 with an aluminum gallium indium phosphide (AlGaInP)/aluminum gallium indium arsenide (AlGa(In)As/gallium indium arsenide(Ga(In)As/germanium (Ge) four-junction solar cell.
  • FIG. 17 illustrates the photon absorption efficiency of another embodiment of the solar cell of the present invention. This embodiment is a four-junction solar cell having as its junctions, aluminum gallium indium phosphide (AlGaInP) (with a band gap of between 2.23 and 2.33 electron volts), gallium arsenide (GaAs) (with a band gap of 1.43 electron volts), indium gallium arsenide (InGaAs) (with a band gap of 1.1 electron volts), and indium gallium antimonide (InGaSb) (with a band gap between 0.3 and 0.5 electron volts).
  • It is to be understood that while the invention in has been described in conjunction with the preferred specific embodiments thereof, that the foregoing description as well as the examples which follow are intended to illustrate and not limit the scope of the invention. Other aspects, advantages and modifications within the scope of the invention will be apparent to those skilled in the art to which the invention pertains.

Claims (20)

We claim:
1. A solar cell comprising:
a first layer comprised of AlGaInP;
a second layer comprised of InGaAs;
a third layer comprised of GaSb;
a fourth layer comprised of InGaSb;
a first tunnel junction disposed between the first and second layers;
a second tunnel junction disposed between the second and third layers; and
a third tunnel junction disposed between the third and fourth layers.
2. The solar cell of claim 1, further comprising an antireflective coating situated on top of the first layer, the antireflective coating comprising one or another of MgO2+TiO2 and In2O3+SnO2.
3. The solar cell of claim 1, wherein the first layer comprises:
an n+ AlGaInP emitter;
a p-type AlGaInP base; and
a p+ type AlGaInP back-surface-field layer.
4. The solar cell of claim 1, wherein the second layer comprises:
an n+ InGaAs emitter;
a p-type InGaAs base; and
a back-surface-field layer.
5. The solar cell of claim 1, wherein the third layer comprises:
an n+ GaSb emitter;
a p-type GaSb base; and
a p+ type GaSb back-surface-field layer.
6. The solar cell of claim 1, wherein the fourth layer comprises:
an n+ InGaSb emitter;
an InGaSb base; and
a p-type InGaSb substrate layer, the emitter and the base being formed on the substrate layer.
7. The solar cell of claim 1, wherein the first tunnel junction comprises:
a p++ AlGaAs tunnel junction; and
an n++ AlGaInP tunnel junction.
8. The solar cell of claim 1, wherein the second tunnel junction comprises:
a p++ AlGaAs tunnel junction; and
a n++ InGaAs tunnel junction.
9. The solar cell of claim 1, wherein the third tunnel junction comprises:
a p++ AlGaAs tunnel junction; and
a n++ GaSb tunnel junction.
10. A solar cell comprising:
a first layer comprised of AlGaInP;
a second layer comprised of InGaP;
a third layer comprised of InGaAs;
a fourth layer comprised of InGaSb;
a first tunnel junction disposed between the first and second layers;
a second tunnel junction disposed between the second and third layers; and
a third tunnel junction disposed between the third and fourth layers.
11. The solar cell of claim 10, wherein the first layer comprises:
an n+ AlGaInP emitter;
an AlGaInP base; and
a p+ AlGaInP back-surface-field layer.
12. The solar cell of claim 10, wherein the second layer comprises:
an n+ InGaP emitter;
a p-type InGaP base; and
a back-surface-field layer.
13. The solar cell of claim 10, wherein the third layer comprises:
an n+ In GaAs emitter;
a p-type InGaAs base; and
a back-surface-field layer.
14. The solar cell of claim 10, wherein the fourth layer comprises:
an n+ InGaSb emitter;
a p-type InGaSb base; and
a p-type InGaSb substrate layer, the emitter and the base being formed on the substrate layer.
15. A solar cell comprising:
a first layer comprised of AlGaInP;
a second layer comprised of GaAs;
a third layer comprised of InGaAs;
a fourth layer comprised of InGaSb;
a first tunnel junction disposed between the first and second layers;
a second tunnel junction disposed between the second and third layers; and
a third tunnel junction disposed between the third and fourth layers.
16. The solar cell of claim 15, wherein the second layer comprises:
an n+ GaAs emitter;
a p-type GaAs base; and
a 70 nm p+ GaAs back-surface-field layer.
17. The solar cell of claim 15, wherein the second tunnel junction comprises:
a p++ AlGaAs tunnel junction; and
an n++ GaAs tunnel junction.
18. The solar cell of claim 15, wherein the third layer comprises:
an n+ InGaAs emitter;
a p-type InGaAs base; and
a p+ type InGaAs back-surface-field layer.
19. The solar cell of claim 15, wherein the third tunnel junction comprises:
a p++ AlGaAs tunnel junction; and
a n++ InGaAs tunnel junction.
20. The solar cell of claim 15, wherein the fourth layer comprises:
a n+ nucleation layer;
an n+ InGaSb emitter;
a p-type InGaSb base; and
a p-type InGaSb substrate layer, wherein the nucleation layer, the emitter, and the base are developed over the substrate layer.
US13/651,969 2011-10-14 2012-10-15 Four junction solar cell Abandoned US20130104970A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/651,969 US20130104970A1 (en) 2011-10-14 2012-10-15 Four junction solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161547303P 2011-10-14 2011-10-14
US13/651,969 US20130104970A1 (en) 2011-10-14 2012-10-15 Four junction solar cell

Publications (1)

Publication Number Publication Date
US20130104970A1 true US20130104970A1 (en) 2013-05-02

Family

ID=48171154

Family Applications (1)

Application Number Title Priority Date Filing Date
US13/651,969 Abandoned US20130104970A1 (en) 2011-10-14 2012-10-15 Four junction solar cell

Country Status (1)

Country Link
US (1) US20130104970A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037618A (en) * 2014-04-22 2014-09-10 吉林农业大学 GaAs-based near-infrared band Sb multi-layer quantum dot and asymmetric quantum well coupled laser structure
CN105405928A (en) * 2015-12-08 2016-03-16 中国电子科技集团公司第十八研究所 Preparation method for four-junction solar cell based on GaInNAs material
CN106575681A (en) * 2014-05-20 2017-04-19 蒙彼利埃大学 Multiple-junction photovoltaic cell based on antimonide materials
CN107871799A (en) * 2016-09-27 2018-04-03 中国电子科技集团公司第十八研究所 A forward-mismatched four-junction solar cell
RU2671549C1 (en) * 2018-02-09 2018-11-01 Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" Photoelectric transformer with antireflection nano-coating
CN108831933A (en) * 2018-06-11 2018-11-16 中国科学院半导体研究所 Back surface field GaSb thermal photovoltaic cell and its preparation method
CN109148621A (en) * 2018-08-15 2019-01-04 中山德华芯片技术有限公司 Double-sided growth efficient six-junction solar cell and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100301454A1 (en) * 2007-11-20 2010-12-02 Yong-Hang Zhang Lattice matched multi-junction photovoltaic and optoelectronic devices
US20100326496A1 (en) * 2009-06-24 2010-12-30 Florida State University Research Foundation, Inc. High efficiency photovoltaic cell for solar energy harvesting
US20120255600A1 (en) * 2011-04-06 2012-10-11 International Business Machines Corporation Method of bonding and formation of back surface field (bsf) for multi-junction iii-v solar cells

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100301454A1 (en) * 2007-11-20 2010-12-02 Yong-Hang Zhang Lattice matched multi-junction photovoltaic and optoelectronic devices
US20100326496A1 (en) * 2009-06-24 2010-12-30 Florida State University Research Foundation, Inc. High efficiency photovoltaic cell for solar energy harvesting
US20120255600A1 (en) * 2011-04-06 2012-10-11 International Business Machines Corporation Method of bonding and formation of back surface field (bsf) for multi-junction iii-v solar cells

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037618A (en) * 2014-04-22 2014-09-10 吉林农业大学 GaAs-based near-infrared band Sb multi-layer quantum dot and asymmetric quantum well coupled laser structure
CN106575681A (en) * 2014-05-20 2017-04-19 蒙彼利埃大学 Multiple-junction photovoltaic cell based on antimonide materials
CN105405928A (en) * 2015-12-08 2016-03-16 中国电子科技集团公司第十八研究所 Preparation method for four-junction solar cell based on GaInNAs material
CN107871799A (en) * 2016-09-27 2018-04-03 中国电子科技集团公司第十八研究所 A forward-mismatched four-junction solar cell
RU2671549C1 (en) * 2018-02-09 2018-11-01 Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" Photoelectric transformer with antireflection nano-coating
CN108831933A (en) * 2018-06-11 2018-11-16 中国科学院半导体研究所 Back surface field GaSb thermal photovoltaic cell and its preparation method
CN109148621A (en) * 2018-08-15 2019-01-04 中山德华芯片技术有限公司 Double-sided growth efficient six-junction solar cell and preparation method thereof

Similar Documents

Publication Publication Date Title
US11411129B2 (en) Solar cells having a transparent composition-graded buffer layer
US8642883B2 (en) Heterojunction solar cell
Brown et al. Third generation photovoltaics
US8912428B2 (en) High efficiency multijunction II-VI photovoltaic solar cells
TWI600173B (en) Multi-junction solar cell with low energy gap absorption layer in intermediate battery and manufacturing method thereof
US7807921B2 (en) Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer
US20130104970A1 (en) Four junction solar cell
US11417788B2 (en) Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
US8039740B2 (en) Single P-N junction tandem photovoltaic device
US20090173373A1 (en) Group III-Nitride Solar Cell with Graded Compositions
EP2083452A1 (en) High concentration terrestrial solar cell arrangement with III-V compound semiconductor cell
US10861992B2 (en) Perovskite solar cells for space
US20120285519A1 (en) Grid design for iii-v compound semiconductor cell
US20100095998A1 (en) Low resistance tunnel junctions for high efficiency tanden solar cells
JP2013524505A (en) Lattice-matchable alloys for solar cells.
JP2000332282A (en) Two-layer passivation structure for photovoltaic cells
WO2014018125A2 (en) Reverse heterojunctions for solar cells
US9842957B1 (en) AlGaAs/GaAs solar cell with back-surface alternating contacts (GaAs BAC solar cell)
US11728453B2 (en) Stacked monolithic multijunction solar cell
US20150325733A1 (en) Grid design for iii-v compound semiconductor cell
KR101905151B1 (en) Compound semiconductor solar cell
US9040342B2 (en) Photovoltaic cell and manufacturing method thereof
Bhattacharya Design and modeling of very high-efficiency multijunction solar cells
US9865761B1 (en) Emitter-less, back-surface alternating-contact solar cell
CN117096210A (en) Reverse three-junction solar cell structure with high external radiation efficiency structure

Legal Events

Date Code Title Description
AS Assignment

Owner name: FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION, INC.

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BHATTACHARYA, INDRANIL;FOO, SIMON Y.;REEL/FRAME:029130/0407

Effective date: 20121015

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION