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TW200736406A - Sputtering apparatus - Google Patents

Sputtering apparatus

Info

Publication number
TW200736406A
TW200736406A TW096101144A TW96101144A TW200736406A TW 200736406 A TW200736406 A TW 200736406A TW 096101144 A TW096101144 A TW 096101144A TW 96101144 A TW96101144 A TW 96101144A TW 200736406 A TW200736406 A TW 200736406A
Authority
TW
Taiwan
Prior art keywords
power supply
targets
sputtering apparatus
oscillation
power
Prior art date
Application number
TW096101144A
Other languages
English (en)
Other versions
TWI390065B (zh
Inventor
Motoshi Kobayashi
Junya Kiyota
Yoshikuni Horishita
Hidenori Yoda
Shigemitsu Satou
Toshio Nakajima
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200736406A publication Critical patent/TW200736406A/zh
Application granted granted Critical
Publication of TWI390065B publication Critical patent/TWI390065B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW096101144A 2006-01-11 2007-01-11 Sputtering device TWI390065B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006003445A JP4320019B2 (ja) 2006-01-11 2006-01-11 スパッタリング装置

Publications (2)

Publication Number Publication Date
TW200736406A true TW200736406A (en) 2007-10-01
TWI390065B TWI390065B (zh) 2013-03-21

Family

ID=38256311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101144A TWI390065B (zh) 2006-01-11 2007-01-11 Sputtering device

Country Status (5)

Country Link
JP (1) JP4320019B2 (zh)
KR (1) KR101018652B1 (zh)
CN (1) CN101370958B (zh)
TW (1) TWI390065B (zh)
WO (1) WO2007080906A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186281B2 (ja) * 2008-05-26 2013-04-17 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5429771B2 (ja) * 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
JP5429772B2 (ja) * 2008-06-30 2014-02-26 株式会社アルバック 電源装置
JP5500794B2 (ja) * 2008-06-30 2014-05-21 株式会社アルバック 電源装置
KR101583667B1 (ko) * 2009-03-06 2016-01-08 위순임 다중 소스 타겟 어셈블리를 갖는 물리적 기상 증착 플라즈마 반응기
CN104878361B (zh) * 2015-06-24 2017-05-31 安徽纯源镀膜科技有限公司 磁控溅射镀膜设备
CN115896721B (zh) * 2022-11-11 2025-07-25 华中科技大学 一种用于调控高熵合金元素比例的磁控溅射方法及系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210285A (ja) * 1985-07-05 1987-01-19 Hitachi Ltd プラズマ処理装置
JPH0668839A (ja) * 1992-08-13 1994-03-11 Tokyo Electron Ltd プラズマ装置における高周波給電装置
JP3100279B2 (ja) * 1994-01-24 2000-10-16 三菱重工業株式会社 真空装置への高周波電力供給方法
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置

Also Published As

Publication number Publication date
JP2007186726A (ja) 2007-07-26
KR101018652B1 (ko) 2011-03-04
CN101370958B (zh) 2010-09-15
JP4320019B2 (ja) 2009-08-26
TWI390065B (zh) 2013-03-21
KR20080078054A (ko) 2008-08-26
CN101370958A (zh) 2009-02-18
WO2007080906A1 (ja) 2007-07-19

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