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TW200703732A - Magnetic sensor and manufacturing method therefor - Google Patents

Magnetic sensor and manufacturing method therefor

Info

Publication number
TW200703732A
TW200703732A TW095108810A TW95108810A TW200703732A TW 200703732 A TW200703732 A TW 200703732A TW 095108810 A TW095108810 A TW 095108810A TW 95108810 A TW95108810 A TW 95108810A TW 200703732 A TW200703732 A TW 200703732A
Authority
TW
Taiwan
Prior art keywords
magnetoresistive elements
giant magnetoresistive
slopes
slope
channels
Prior art date
Application number
TW095108810A
Other languages
English (en)
Other versions
TWI313078B (en
Inventor
Hiroshi Naito
Hideki Sato
Yukio Wakui
Masayoshi Omura
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2005077010A external-priority patent/JP4984408B2/ja
Priority claimed from JP2005088828A external-priority patent/JP4734987B2/ja
Priority claimed from JP2005091617A external-priority patent/JP4984412B2/ja
Priority claimed from JP2005091616A external-priority patent/JP2006278439A/ja
Priority claimed from JP2005098498A external-priority patent/JP4972871B2/ja
Priority claimed from JP2005131857A external-priority patent/JP4984424B2/ja
Priority claimed from JP2005350487A external-priority patent/JP4961736B2/ja
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of TW200703732A publication Critical patent/TW200703732A/zh
Application granted granted Critical
Publication of TWI313078B publication Critical patent/TWI313078B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/4902—Electromagnet, transformer or inductor
    • Y10T29/49075—Electromagnet, transformer or inductor including permanent magnet or core

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
TW095108810A 2005-03-17 2006-03-15 Magnetic sensor and manufacturing method therefor TWI313078B (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2005077010A JP4984408B2 (ja) 2005-03-17 2005-03-17 磁気センサおよびその製法
JP2005088828A JP4734987B2 (ja) 2005-03-25 2005-03-25 磁気センサの製造方法
JP2005091617A JP4984412B2 (ja) 2005-03-28 2005-03-28 磁気センサおよび磁気センサの製造方法
JP2005091616A JP2006278439A (ja) 2005-03-28 2005-03-28 磁気センサの製造方法
JP2005098498A JP4972871B2 (ja) 2005-03-30 2005-03-30 磁気センサおよびその製造方法
JP2005131857A JP4984424B2 (ja) 2005-04-28 2005-04-28 磁気センサおよびその製造方法
JP2005350487A JP4961736B2 (ja) 2005-12-05 2005-12-05 磁気センサの製造方法

Publications (2)

Publication Number Publication Date
TW200703732A true TW200703732A (en) 2007-01-16
TWI313078B TWI313078B (en) 2009-08-01

Family

ID=36991709

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108810A TWI313078B (en) 2005-03-17 2006-03-15 Magnetic sensor and manufacturing method therefor

Country Status (4)

Country Link
US (2) US8178361B2 (zh)
EP (1) EP1860450B1 (zh)
TW (1) TWI313078B (zh)
WO (1) WO2006098367A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452743B (zh) * 2011-03-03 2014-09-11 Voltafield Technology Corp 磁阻感測器的製造方法
TWI452319B (zh) * 2012-01-09 2014-09-11 Voltafield Technology Corp 磁阻感測元件

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US8178361B2 (en) 2005-03-17 2012-05-15 Yamaha Corporation Magnetic sensor and manufacturing method therefor
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JP6954326B2 (ja) 2019-06-05 2021-10-27 Tdk株式会社 位置検出装置
JP7063307B2 (ja) 2019-06-05 2022-05-09 Tdk株式会社 磁気センサおよび磁気センサシステム
JP6954327B2 (ja) 2019-06-10 2021-10-27 Tdk株式会社 位置検出装置
US11372029B2 (en) * 2019-12-11 2022-06-28 Tdk Corporation Magnetic field detection apparatus and current detection apparatus
JP7107330B2 (ja) * 2020-03-27 2022-07-27 Tdk株式会社 磁気センサおよびその製造方法
JP7302612B2 (ja) 2021-01-18 2023-07-04 Tdk株式会社 磁気センサ
JP7298630B2 (ja) * 2021-01-25 2023-06-27 Tdk株式会社 磁気センサ
US12044753B2 (en) * 2021-09-21 2024-07-23 Tdk Corporation Sensor having at least part of sensor element disposed on inclined surface of protruding portion of support member
US12164009B2 (en) * 2021-09-21 2024-12-10 Tdk Corporation Sensor including a plurality of insulating layers made of different insulating materials
US11892527B2 (en) * 2021-09-21 2024-02-06 Tdk Corporation Magnetic sensor
US11867779B2 (en) * 2021-09-21 2024-01-09 Tdk Corporation Sensor
JP2023046259A (ja) 2021-09-21 2023-04-03 Tdk株式会社 センサ
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452743B (zh) * 2011-03-03 2014-09-11 Voltafield Technology Corp 磁阻感測器的製造方法
TWI452319B (zh) * 2012-01-09 2014-09-11 Voltafield Technology Corp 磁阻感測元件
US9182458B2 (en) 2012-01-09 2015-11-10 Voltafield Technology Corporation Magnetoresistive sensing device

Also Published As

Publication number Publication date
US20080169807A1 (en) 2008-07-17
US8178361B2 (en) 2012-05-15
EP1860450B1 (en) 2011-06-08
EP1860450A1 (en) 2007-11-28
WO2006098367A1 (ja) 2006-09-21
US9054028B2 (en) 2015-06-09
EP1860450A4 (en) 2010-05-26
TWI313078B (en) 2009-08-01
US20120272514A1 (en) 2012-11-01

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