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SE2050185A1 - Semiconductor device and method for producing same - Google Patents

Semiconductor device and method for producing same

Info

Publication number
SE2050185A1
SE2050185A1 SE2050185A SE2050185A SE2050185A1 SE 2050185 A1 SE2050185 A1 SE 2050185A1 SE 2050185 A SE2050185 A SE 2050185A SE 2050185 A SE2050185 A SE 2050185A SE 2050185 A1 SE2050185 A1 SE 2050185A1
Authority
SE
Sweden
Prior art keywords
resin
semiconductor device
wire
sealing layer
viscosity
Prior art date
Application number
SE2050185A
Other languages
English (en)
Other versions
SE543901C2 (en
Inventor
Daichi Takemori
Eiichi Satoh
Kazuhiko Yamada
Kohei Seki
Mitsuo Togawa
Mizuko Sato
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SE2050185A1 publication Critical patent/SE2050185A1/en
Publication of SE543901C2 publication Critical patent/SE543901C2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Claims (20)

1. Halvledaranordning uppvisande ett substrat, ett halvledarelement anordnat på substratet,en tråd som elektriskt förbinder substratet och halvledarelementet, ett första tåtningsskikt somtillsluter ett utrymme under en topp av tråden, varvid det första tåtningsskiktet år bildat från en hårdad film av ett flytandetåtningsmaterial, kånnetecknat av ett andra tåtningsskikt som år anordnat ovanpå det första tåtningsskiktetmed tråden placerad dåremellan, varvid det andra tåtningsskiktet år bildat från en torkad tåckningsfilm av ett isolerandetåckningsmaterial av harts, varvid det isolerande tåckningsmaterialet av harts innefattar ett fyllnadsmaterial av harts som uppvisar en medelpartikelstorlek om 0,1 till 5,0 um.
2. Halvledaranordning enligt krav 1, vilken också uppvisar ett tåtningselement av harts anordnat för att tåcka åtminstone det andra tåtningsskiktet.
3. Halvledaranordning enligt krav 1 eller 2, varvid en dielektrisk genomslagsspånning förden torkade tåckningsfilmen av det isolerande tåckningsmaterialet av harts år åtminstone 150 kV/mm.
4. Halvledaranordning enligt något av kraven 1 till 3, varvid det isolerandetåckningsmaterialet av harts innefattar ett blandat lösningsmedel som innefattar ett första polårtlösningsmedel (A1) och ett andra polårt lösningsmedel (A2) som uppvisar en kokpunkt lågreån kokpunkten för det första polåra lösningsmedlet (A1) i ett massförhållande (A1:A2) inomett intervall från 6:4 till 9:1, ett isolerande vårrnebeståndigt harts (B) som år lösligt i det blandade lösningsmedlet avdet första polåra lösningsmedlet (A1) och det andra polåra lösningsmedlet (A2) vid rumstemperatur, och ett isolerande vårrnebeståndigt harts (C) som, vid rumstemperatur, år lösligt i det första polåra lösningsmedlet (A1), olösligt i det andra polåra lösningsmedlet (A2), och olösligt i det blandade lösningsmedlet av det första polåra lösningsmedlet (Al) och det andra polåra lösningsmedlet (A2).
5. Halvledaranordning enligt något av kraven l till 4, varvid viskositeten vid 25°C hos det isolerande tåckningsmaterialet av harts ligger inom ett intervall från 30 till 500 Pa-s.
6. Halvledaranordning enligt något av kraven l till 5, varvid ett tixotropiskt index vid 25°C hos det isolerande tåckningsmaterialet av harts ligger inom ett intervall från 2,0 till l0,0.
7. Halvledaranordning enligt något av kraven l till 6, varvid det isolerandetåckningsmaterialet av harts innefattar åtminstone ett isolerande harts valt från gruppen bestående av en polyamid, en polyamidimid och en polyimid.
8. Halvledaranordning enligt något av kraven l till 7, varvid tjockleken hos det andra tåtningsskiktet inte år mer ån l00 pm.
9. Halvledaranordning enligt krav 8, varvid tj ockleken hos det andra tåtningsskiktet inte år mer ån 50 tim.
10. l0. Halvledaranordning enligt något av kraven 7 till 9, varvid ett Tg-vårde för det isolerande hartset år åtminstone l50°C.
11. ll. Halvledaranordning enligt något av kraven l till l0, varvid det flytandetåckningsmaterialet innefattar en vårrnehårdande hartskomponent och ett oorganisktfyllnadsmaterial, och ett tixotropiskt index vid 75°C hos det flytande tåckningsmaterialet,erhållet som ett vårde av viskositet A/viskositet B, ligger inom ett intervall från 0,l till 2,5, varvid viskositeten A år en viskositet (Pa-s) mått vid förhållanden om 75°C och en skjuvningshastighet om 5 s-l och viskositeten B år en viskositet (Pa-s) mätt vid förhållanden om 75°C och en skjuvningshastighet om 50 s'1.
12. Halvledaranordning enligt något av kraven 1 till 11, varvid innehållet av klorjoner i det flytande tåckningsmaterialet inte år mer ån 100 ppm.
13. Halvledaranordning enligt krav 11 eller 12, varvid en högsta partikelstorlek i det oorganiska fyllnadsmaterialet i det flytande tåckningsmaterialet inte år mer ån 75 tim.
14. Halvledaranordning enligt något av kraven 1 till 13, varvid en viskositet hos det flytandetåckningsmaterialet mått vid förhållanden om 75°C och en skjuvningshastighet om 5 s-l inte år mer ån 3,0 Pa-s.
15. Halvledaranordning enligt något av kraven 1 till 14, varvid en viskositet hos det flytandetåckningsmaterialet mått vid förhållanden om 25°C och en skjuvningshastighet om 10 s-l inte år mer ån 30 Pa-s.
16. Halvledaranordning enligt något av kraven 11 till 15, varvid en mångd av det oorganiskafyllnadsmaterialet, baserat på en total massa av det flytande tåckningsmaterialet, år åtminstone 50 massprocent.
17. Halvledaranordning enligt något av kraven 11 till 16, varvid den vårrnehårdandehartskomponenten i det flytande tåckningsmaterialet innefattar ett aromatiskt epoxiharts och ett alifatiskt epoxiharts.
18. Halvledaranordning enligt krav 17, varvid det aromatiska epoxihartset innefattar åtminstone ett harts valt från gruppen bestående av ett flytande bisfenolbaserat epoxiharts och ett flytande glycidylaminbaserat epoxiharts, och det alifatiska epoxihartset innefattar ett linjärtalifatiskt epoxiharts.
19. Halvledaranordning enligt något av kraven 1 till 18, vilken används i en sensor för fingeravtrycksautentisering.
20. Förfarande för framställning av en halvledaranordning uppvisande ett substrat, etthalvledarelement anordnat på substratet, en tråd som elektriskt förbinder substratet ochhalvledarelementet, ett första tätningsskikt som tillsluter ett utrymme under en topp av tråden,och ett andra tätningsskikt som är anordnat ovanpå det första tätningsskiktet med trådenplacerad däremellan, varvid förfarandet innefattar: ett steg av elektriskt förbindande av substratet och halvledarelementet som är anordnat på substratet med användande av tråden, ett steg av utforrnande av det första tätningsskiktet genom tillhandahållande av ettflytande tätningsmaterial till utrymmet under toppen av tråden och utförande av härdning för att erhålla en härdad film av det flytande tätningsmaterialet, och ett steg av utforrnande av det andra tätningsskiktet genom tillhandahållande av ettisolerande täckningsmaterial av harts ovanpå det första tätningsskiktet med tråden placeraddäremellan, och utförande av torkning för att erhålla en torkad täckningsfilm av det isolerandetäckningsmaterialet av harts, varvid det isolerande täckningsmaterialet av harts innefattar ett fyllnadsmaterial av harts som uppvisar en medelpartikelstorlek om 0,1 till 5,0 um.
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